We present a compact physics-based model of the current-voltagecharacteristics of graphene field-effect transistors, of especial interest foranalog and radio-frequency applications where bandgap engineering of graphenecould be not needed. The physical framework is a field-effect model anddrift-diffusion carrier transport. Explicit closed-form expressions have beenderived for the drain current covering continuosly all operation regions. Themodel has been benchmarked with measured prototype devices, demonstratingaccuracy and predictive behavior. Finally, we show an example of projection ofthe intrinsic gain as a figure of merit commonly used in RF /analogapplications.
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